Fraunhofer Group for Microelectronics in cooperation with the Leibniz institutes IHP and FBH
GaN solid-state power amplifier in ka band (26.5 to 40 GHz)
As higher and higher frequencies are used in next-generation communication systems, amplifiers that can deliver high power in these applications are crucial components, and in the mm-wave frequency range, they are usually realized with vacuum tubes.
Solid-State Power Amplifiers (SSPA)
However, solid-state power amplifiers (SSPA) are the better alternative due to their inherent advantages. Gallium nitride (GaN) power transistors and integrated circuits enable amplifiers with simultaneously high bandwidth, output power, and efficiency. This enables achieving the best high-frequency data while keeping operating costs and energy consumption low.
The Ka band (26.5 to 40 GHz) enables a higher bandwidth and is therefore particularly suitable for satellite communication applications.
The 16-way SSPA developed by Fraunhofer IAF contains 16 broadband GaN chips and a broadband and low-loss power combiner. The system thus offers considerable advantages in terms of efficiency and bandwidth. It delivers a peak output power of 127 W and almost 100 W over a large part of the Ka-band, thus significantly advancing the state of the art.
Research paper: https://ieeexplore.ieee.org/document/8700951
Participating FMD member institutes: Fraunhofer IAF
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