Our cross-location competencies in Power Electronics

Power Electronics

The technology platform Power Electronics offers pro­found in-depth knowledge in materials research and pro­cessing of wide bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN). Compa­red to conventional Si-based power electronics, the WBG semiconductors enable devices which are more power efficient and have a leaner module / system design even at higher operating temperatures. In our unique cleanroom facilities, we are able to build devices in Si-based, SiC-based or GaN-based technologies.

 

FMD offers profound in-depth knowledge in Materials Research and Processing of Wide Bandgap (WBG) Semiconductors such as silicon carbide (SiC) and gallium nitride (GaN):

  • Fully integrated 150 mm line to manufacture state-of-the-art SiC devices; integration on cost-efficient 200 mm Si substrates for GaN-based devices  
  • Ability to build devices in Si-based, SiC-based or GaN-based technologies
  • New device concepts, such as vertical GaN-transistors, Al-GaN-/GaN-based devices for fast switching and future WBG semiconductors like aluminium nitride (AlN) and Gallium oxide (Ga2O3)  
  • Integration of single devices into modules and systems: heterogeneous-system-integration as well as characterization of single devices, integrated modules or complete systems

 

Flyer Power Electronics

 

GaN Chip Prepackage

Module eliminates packaging barriers combined with an innovative metalized transfer mold.

 

Drive Unit for Fully Electric Vehicles

Compact, Smart and Reliable Drive Unit for Fully Electric Vehicles

 

Multi-Level Converter

Multi-level converters allow overcoming the specific weak points of high-blocking voltage semiconductors and are therefore the key technology for efficient and cost-effective power electronic systems in high-and medium-voltage applications.

 

600 V Full Bridge Cell for Modular Converters