The technology platform Power Electronics offers profound in-depth knowledge in materials research and processing of wide bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN). Compared to conventional Si-based power electronics, the WBG semiconductors enable devices which are more power efficient and have a leaner module / system design even at higher operating temperatures. In our unique cleanroom facilities, we are able to build devices in Si-based, SiC-based or GaN-based technologies.
FMD offers profound in-depth knowledge in Materials Research and Processing of Wide Bandgap (WBG) Semiconductors such as silicon carbide (SiC) and gallium nitride (GaN):
- Fully integrated 150 mm line to manufacture state-of-the-art SiC devices; integration on cost-efficient 200 mm Si substrates for GaN-based devices
- Ability to build devices in Si-based, SiC-based or GaN-based technologies
- New device concepts, such as vertical GaN-transistors, Al-GaN-/GaN-based devices for fast switching and future WBG semiconductors like aluminium nitride (AlN) and Gallium oxide (Ga2O3)
- Integration of single devices into modules and systems: heterogeneous-system-integration as well as characterization of single devices, integrated modules or complete systems