Our cross-location competencies in Extended CMOS

Extended CMOS

The technology platform »Extended CMOS« focuses on materials and processes, system integration as well as characterization of materials, test of devices and reliability assessments.

 

The FMD offers long lasting experience and know-how in Developing and Manufacturing of CMOS-based Components and Systems within its cleanrooms:

  • Fully equipped state-of-the art 200 mm BiCMOS and CMOS lines
  • Processes for FEOL, MOL, as well as BEOL
  • New materials, processes and technologies, like new memory concepts and neuromorphic computing technologies are pursued
  • 1D, 2D materials and technologies; 2.5/3D integration technologies
  • R & D services for TSV, wafer bumping, redistribution layers and solder balls
  • Fabrication of high density silicon, glass and polymer interposer, wafer thinning, dicing, wafer to wafer bonding, high precision multi-die assembly, die stacking, and molding

 

Extended CMOS along the value chain

 

Europractice IC Service: Multi Project Wafer (MPW) and Prototyping 

Within the EUROPRACTICE IC Service, the Leibniz IHP as part of the Research Fab Microelectronics Germany, is providing a manufacturing service for Multi Project Wafer (MPW) and Prototyping. More information here.

Flyer Extended CMOS

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Universal Sensor Platform (USeP)

Emerging & Beyond CMOS

With its 13 member institutes of the Fraunhofer-Gesellschaft and Leibniz Association, the Research Fab Microelectronics Germany (FMD) demonstrates research achievements of international excellence. In this way, FMD contributes to Germany and Europe, taking a leading position in research and development. Some selected research highlights and lighthouse projects in the field of emerging & beyond CMOS can be found below.

The list of all publications for the Extended CMOS Technology Platform for download:

Non-Volatile Memories

By means of ferroelectric field effect transistors (FeFET) based on HfO2 in the 28- or 22-nm technology node, the weight values required for deep learning algorithms can not only be stored directly in the chip but also calculated with these.
© Fraunhofer IPMS
By means of ferroelectric field effect transistors (FeFET) based on HfO2 in the 28- or 22-nm technology node, the weight values required for deep learning algorithms can not only be stored directly in the chip but also calculated with these.
  • Functional low-power memory solutions based on ferroelectric hafnium oxide (FeFETs, FRAM)
  • Integrated FeFET arrays in collaboration with GLOBALFOUNDRIES
  • Demonstration of the outstanding properties of circuits based on FeFETs for neuromorphic computing

Cooperation:

»RASCAL« (Racetrack Memory Scaling of ultra-dense and energy-efficient data storage)

  • Joint project of the Fraunhofer-Gesellschaft and Max Planck Society for material investigations and realization of racetrack memories using the FMD sputtering cluster
  • Goal is to demonstrate data storage technology with high reliability, scaling density, and energy efficiency

Weiterführende Informationen:
300 mm Devices and Value Added Solutions

 

Carbon Nanotubes (CNT) for Future Electronics and Sensor Technology

Schematic representation of a carbon nanotube based field effect transistor (CNT-FET).
© Fraunhofer ENAS
Schematic representation of a carbon nanotube based field effect transistor (CNT-FET).
  • On-Demand: First accessible platform for applications in (integrated) sensor technology
  • Heterogeneous integration technologies for nano-components consistently on wafers up to 200 mm (e.g. ASIC+CNT)
  • New technology for energy-efficient analog high-frequency transceiver electronics

Cooperations:

  • BMBF-funded project SmartStar
  • Excellence initiative cfaed (Center for Advancing Electronics Dresden)
  • SAB project SenPress

Publications:

Hartmann, M. et al. (2020): Gate Spacer Investigation for Improving the Speed of High-Frequency Carbon Nanotube-Based Field-Effect Transistors, ACS Applied Materials & Interfaces 2020 12 (24), 27461-27466. DOI: 10.1021/acsami.0c01171

Böttger, S. et al. (2019): Sensitivity control of carbon nanotube-based piezoresistive sensors by drain-induced barrier thinning, Sensors and Actuators A: Physical, Volume 295, 2019, Pages 288-295. DOI: 10.1016/j.sna.2019.06.003

World's Fastest SiGe-based THz Transistors in CMOS

Representation of the cut-off frequency as a function of the maximum frequency - Illustration of the published performance data of SiGe heterobipolar transistors. With its SiGe-BiCMOS technology IHP represents the best-in-class technology.
© IHP
Representation of the cut-off frequency as a function of the maximum frequency - Illustration of the published performance data of SiGe heterobipolar transistors. With its SiGe-BiCMOS technology IHP represents the best-in-class technology.
  • New process options for vertical scaling of heterobipolar transistors (HBT)
  • Realization of HBT with cut-off frequencies > 0.6 THz in BiCMOS

Cooperations: 

Publications:

Rücker, H. et al. (2018): High-Performance SiGe HBTs for Next Generation BiCMOS Technology, Semicond, Sci. Technol., vol. 33, p. 114003 (2018). DOI: 10.1088/1361-6641/aade64

Wolansky, D. et al. (2018): Impact of nickel silicide formations on SiGe BiCMOS devices, Semicond. Sci. Technol., vol. 33, p. 124003 (2018). DOI: 10.1088/1361-6641/aae612

H. Rücker & B. Heinemann (2019): Device Architectures for High-Speed SiGe HBTs, 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS). DOI: 10.1109/BCICTS45179.2019.8972757

Further information: 

Emerging Devices & Technologies