Fraunhofer Group for Microelectronics in cooperation with the Leibniz institutes IHP and FBHIntegration of new material systems
MEMS-/ NEMS Sensors and Actuators and combinations with CMOS-Processes
High frequency compliant MEMS and SiGe-elements
Development of new devices in the BEoL-area
Device and system integration on 300 mm wafer
Compound semiconductors for leading-edge-devices and circuits for frequencies up to 800GHz
Power transistors based on Wide-Bandgap-Semcicondutors as well as optoelectronic devices
Further development of special substrates (e.g. SiC, AIN, Ga2O3)
