Digital power amplifier

Fast and efficient switching combines power electronics with high-frequency electronics (power meets HF).

In the infrastructure of future mobile communications from sub-6 to 300 GHz (5G/6G), it ensures more efficient energy management, maximum flexibility and compactness - with complete digitalization.

Fully digital GaN-based transmitter module

The Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik has developed a fully digital GaN-based transmitter module for the 5G mobile communications infrastructure..

This module is the first to use a novel, robust, and compact digital GaN PA chip with greatly reduced complexity compared to previous designs. The 1.8 x 1.8 mm² chip requires three current sources and an input amplitude of only 700 mVpp.

The amplified signal at the chip's output pin is then fed into a simple bandpass filter made of concentrated SMD components, which is tuned to a signal frequency of 900 MHz.

The transmitter chain is completed with an SPDT T/R switch that uses 8 x 125 µm GaN HEMTs. The switch has an insertion loss of 0.6 dB in the transmission path.

Dowload: https://www.fbh-berlin.de/fileadmin/downloads/III-V_Electronics/FBH_Datasheet_Digital_Power_Amplifier.pdf

Participating FMD member institute: Ferdinand-Braun-Institut (FBH)

Satellite-based networks play a key role in the transition to the fifth and sixth generation of mobile communications standards, which must be able to transmit increasing amounts of data quickly and error-free. However, more powerful high-frequency technologies are needed to tap into the millimeter-wave spectrum frequencies required for this. As part of the Magellan project, ESA has therefore commissioned Fraunhofer IAF and its partners, UMS and Tesat, to develop novel GaN transistors and high-performance amplifier circuits for satellite communication in the Ka, Q and W bands.

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